Influence of zirconium addition on microstructure, hardness and oxidation resistance of tantalum nitride thin films

Ta_1-xZr_xN thin films were deposited by reactive magnetron sputtering aiming to investigate the influence of zirconium addition on the microstructure, hardness and high temperature oxidation resistance of the coatings. GAXRD showed that all Ta_1-xZr_xN thin films maintained ZrN crystalline structure, forming a TaZrN solid solution. Zr incorporation did not alter hardness values of Ta_1-xZr_xN coatings, however, promoted significant improvements in the oxidation resistance when compared to pure TaN thin films.

Keywords
Thin films; Magnetron sputtering; Tantalum nitride; Nanohardness; High temperature oxidation

Authorship

Jonh Yago Erikson Santos e-mail: jonhyagoo@gmail.com, arterto@outlook.com, daniel.angel0275@gmail.com, juliocesarvaleriano@gmail.com, beatrizsilva867@gmail.com, luisfernandosabino@hotmail.com, iagolemos18@gmail.com, hubler@pucrs.br, etentardini@academico.ufs.br

Universidade Federal de Sergipe, Departamento de Ciência e Engenharia de Materiais, Programa de Pós-Graduação em Ciência e Engenharia de Materiais, Laboratório de Filmes Finos, Avenida Marechal Rondon, S/N, CEP: 49100-000, São Cristóvão, SE, Brasil.Universidade Federal de SergipeBrasilSão Cristóvão, SE, BrasilUniversidade Federal de Sergipe, Departamento de Ciência e Engenharia de Materiais, Programa de Pós-Graduação em Ciência e Engenharia de Materiais, Laboratório de Filmes Finos, Avenida Marechal Rondon, S/N, CEP: 49100-000, São Cristóvão, SE, Brasil.

Autor Responsável: Jonh Yago Erikson Santos

https://orcid.org/0000-0002-7933-8623

André Romão Terto e-mail: jonhyagoo@gmail.com, arterto@outlook.com, daniel.angel0275@gmail.com, juliocesarvaleriano@gmail.com, beatrizsilva867@gmail.com, luisfernandosabino@hotmail.com, iagolemos18@gmail.com, hubler@pucrs.br, etentardini@academico.ufs.br

https://orcid.org/0000-0003-0229-6928

Daniel Angel Ramirez

https://orcid.org/0000-0002-5327-2654

Júlio César Valeriano dos Santos e-mail: jonhyagoo@gmail.com, arterto@outlook.com, daniel.angel0275@gmail.com, juliocesarvaleriano@gmail.com, beatrizsilva867@gmail.com, luisfernandosabino@hotmail.com, iagolemos18@gmail.com, hubler@pucrs.br, etentardini@academico.ufs.br

https://orcid.org/0000-0002-1686-4597

Beatriz dos Santos Silva Brito e-mail: jonhyagoo@gmail.com, arterto@outlook.com, daniel.angel0275@gmail.com, juliocesarvaleriano@gmail.com, beatrizsilva867@gmail.com, luisfernandosabino@hotmail.com, iagolemos18@gmail.com, hubler@pucrs.br, etentardini@academico.ufs.br

https://orcid.org/0000-0001-5242-5535

Luís Fernando Sabino e-mail: jonhyagoo@gmail.com, arterto@outlook.com, daniel.angel0275@gmail.com, juliocesarvaleriano@gmail.com, beatrizsilva867@gmail.com, luisfernandosabino@hotmail.com, iagolemos18@gmail.com, hubler@pucrs.br, etentardini@academico.ufs.br

https://orcid.org/0000-0002-2455-1961

Iago Lemos Dias e-mail: jonhyagoo@gmail.com, arterto@outlook.com, daniel.angel0275@gmail.com, juliocesarvaleriano@gmail.com, beatrizsilva867@gmail.com, luisfernandosabino@hotmail.com, iagolemos18@gmail.com, hubler@pucrs.br, etentardini@academico.ufs.br

https://orcid.org/0000-0002-9136-906X

Roberto Hübler e-mail: jonhyagoo@gmail.com, arterto@outlook.com, daniel.angel0275@gmail.com, juliocesarvaleriano@gmail.com, beatrizsilva867@gmail.com, luisfernandosabino@hotmail.com, iagolemos18@gmail.com, hubler@pucrs.br, etentardini@academico.ufs.br

Pontifícia Universidade Católica do Rio Grande do Sul, Faculdade de Física, Gepsi - Grupo de Estudos de Propriedades de Superfícies e Interfaces, Avenida Ipiranga, 6681, CEP: 90619-900, Porto Alegre, RS, Brasil.Pontifícia Universidade Católica do Rio Grande do SulBrasilPorto Alegre, RS, BrasilPontifícia Universidade Católica do Rio Grande do Sul, Faculdade de Física, Gepsi - Grupo de Estudos de Propriedades de Superfícies e Interfaces, Avenida Ipiranga, 6681, CEP: 90619-900, Porto Alegre, RS, Brasil.

https://orcid.org/0000-0002-8625-5607

Eduardo Kirinus Tentardini e-mail: jonhyagoo@gmail.com, arterto@outlook.com, daniel.angel0275@gmail.com, juliocesarvaleriano@gmail.com, beatrizsilva867@gmail.com, luisfernandosabino@hotmail.com, iagolemos18@gmail.com, hubler@pucrs.br, etentardini@academico.ufs.br

https://orcid.org/0000-0001-5898-2973

Autor Responsável: Jonh Yago Erikson Santos

e-mail: jonhyagoo@gmail.com, arterto@outlook.com, daniel.angel0275@gmail.com, juliocesarvaleriano@gmail.com, beatrizsilva867@gmail.com, luisfernandosabino@hotmail.com, iagolemos18@gmail.com, hubler@pucrs.br, etentardini@academico.ufs.br

SCIMAGO INSTITUTIONS RANKINGS

Figures | Tables

Figures (7)
Tables (2)

Thumbnail

Figure 1
Deposition system scheme.

Thumbnail

Figure 2
EDS analysis of Ta_1-xZr_xN thin films deposited with the following power applied to Zr target: a) 20 W; b) 50 W and c) 100 W.

Thumbnail

Figure 3
GAXRD patterns obtained for as deposited ZrN, TaN and Ta_1-xZr_xN thin films.

Thumbnail

Figure 4
Hardness values of all samples obtained through nanohardness tests.

Thumbnail

Figure 5
X-ray diffraction patterns obtained for as deposited ZrN thin films and oxidized at 773 K, 873 K and 973 K.

Thumbnail

Figure 6
Diffraction patterns obtained for as deposited TaN samples and oxidized at 773 K, 873 K and 973 K.

Thumbnail

Figure 7
Diffraction patterns obtained for TaZrN thin films containing 52 at.% of Zr, as deposited and oxidized at 773 K, 873 K and 973 K.

Thumbnail

Table 1
Relative contents in at.% of Ta/Zr obtained by EDS for Ta_1-xZr_xN coatings.

Thumbnail

Table 2
Ta_1-xZr_xN diffraction peaks shift, in comparison with pure ZrN.

Figure 1 Deposition system scheme.

Figure 2 EDS analysis of Ta_1-xZr_xN thin films deposited with the following power applied to Zr target: a) 20 W; b) 50 W and c) 100 W.

Figure 3 GAXRD patterns obtained for as deposited ZrN, TaN and Ta_1-xZr_xN thin films.

Figure 4 Hardness values of all samples obtained through nanohardness tests.

Figure 5 X-ray diffraction patterns obtained for as deposited ZrN thin films and oxidized at 773 K, 873 K and 973 K.

Figure 6 Diffraction patterns obtained for as deposited TaN samples and oxidized at 773 K, 873 K and 973 K.

Figure 7 Diffraction patterns obtained for TaZrN thin films containing 52 at.% of Zr, as deposited and oxidized at 773 K, 873 K and 973 K.

Table 1 Relative contents in at.% of Ta/Zr obtained by EDS for Ta_1-xZr_xN coatings.

SAMPLE	POWER APPLIED IN ZR TARGET (W)	ZR CONTENT (AT.%)	TA CONTENT (AT.%)
TaZrN_26	20	26 ± 3	74 ± 7
TaZrN_52	50	52 ± 5	48 ± 5
TaZrN_77	100	77 ± 8	23 ± 3

Table 2 Ta_1-xZr_xN diffraction peaks shift, in comparison with pure ZrN.

SAMPLE	POSITION OF DIFFRACTION PEAKS IN 2Θ (°)
SAMPLE	(111)	(200)	(220)	(311)
ZrN	33.8	39.3	56.8	67.9
TaZrN_77	34.4	39.9	57.9	69.1
TaZrN_52	34.6	40.0	58.3	69.8
TaZrN_26	34.9	40.1	58.9	70.4

How to cite

copy

Laboratório de Hidrogênio, Coppe - Universidade Federal do Rio de Janeiro, em cooperação com a Associação Brasileira do Hidrogênio, ABH2 Av. Moniz Aragão, 207, 21941-594, Rio de Janeiro, RJ, Brasil, Tel: +55 (21) 3938-8791 - Rio de Janeiro - RJ - Brazil
E-mail: revmateria@gmail.com

Acompanhe os números deste periódico no seu leitor de RSS

Versão para download de PDF

PDF

Inglês

Versões e tradução automática

Versão original do texto

English

Tradução automática

Google Translator
Microsoft Translator

Como citar

RIS

BIBTEX

Outros formatos de citação e exportação:

SciELO - Scientific Electronic Library Online
Rua Dr. Diogo de Faria, 1087 – 9º andar – Vila Clementino 04037-003 São Paulo/SP - Brasil
E-mail: scielo@scielo.org

Leia a Declaração de Acesso Aberto

Métricas

Influence of zirconium addition on microstructure, hardness and oxidation resistance of tantalum nitride thin films

PlumX

Mensagem

[1] Autor Responsável: Jonh Yago Erikson Santos